| PART |
Description |
Maker |
| SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| 2N5754 2N5755 2N5756 2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V.
2.5-A silicon triac. Voltage(typ) 400 V.
2.5-A silicon triac. Voltage(typ) 200 V.
2.5-A silicon triac. Voltage(typ) 100 V.
2.5-A Silicon Triacs
|
General Electric Solid State
Solid State Optronic
N.A.
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| CAT28C64BHP-20 CAT28C64BHN-15 CAT28C64BHT-20 CAT28 |
PROFET - Smart High Side Switches
XWAY™ ADM6993
RF Switches; Package: PG-TSLP-7; P-0.1dB(min): 21.0 dBm; Switching Time(max): 4.0 µs; Isolation @1GHz: 32.0 dB; Insertion Loss @1GHz: 0.4 dB; Pmax: 21.0 dBm
HITFET, TEMPFET - Smart Low-Side Switches
IGBT Modules up to 1200V SixPACK; Package: AG-EASY2B-1; IC (max): 50.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EasyPACK 2B;
IGBT Modules up to 6500V Single; Package: A-IHV130-3; IC (max): 400.0 A; VCE(sat) (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
Single: N-Channel 600V MOSFETs; Package: PG-TO262-3; Technology: CoolMOS™; VDS (max): 600.0 V; RDS (on) (max) (@10V): 105.0 mOhm; ID (max): 31.0 A; RthJC (max): 0.5 K/W;
XWAY™ ADM5120P
Medium Power IF max = 500mA; Package: PG-SOT363-6; Configuration: Single; VR (max): 30.0 V; IF (max): 2,000.0 mA; CT (max): 60.0 pF; VF (max): 600.0 mV;
X-GOLD™213 - PMB8810
UMTS LNA; Package: PG-TSLP-16; Frequency Hz: 800 MHz 1900 MHz 2100 MHz; Gain (typ): 15.2 dB 16.5 dB 16.5 dB; F (typ): 1.2 dB 1.0 dB 1.1 dB; P-1dB (in): -12 -10 -11; I (typ): 3.5 mA 3.4 mA 3.5 mA;
SPOC - SPI Power Controller for Advanced Light Control; Package: PG-DSO-36; Channels: 5.0; LED mode: No; Cranking mode: No; Watchdog: No; Over Voltage Protection: 41.0 V
IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC (max): 75.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK™ 2;
128Kx8 EEPROM 128Kx8 EEPROM
ADM3120BX x8的EEPROM
IGBT Modules up to 6500V Single; Package: A-IHV130-3; I<sub>C </sub>(max): 400.0 A; V<sub>CE(sat)</sub> (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
|
Honeywell International, Inc.
NXP Semiconductors N.V.
Infineon Technologies AG
Amphenol, Corp.
Vectron International, Inc.
Advanced Analogic Technologies, Inc.
|
| STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package
N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics
STMicroelectronics
|
| STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| 2SC3356 |
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
|
TY Semiconductor Co., Ltd
|
| STU6N60M2 STF6N60M2 STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
ST Microelectronics
|
| IRF320-323 IRF321 IRF322 IRF323 IRF320 IRF720 IRF7 |
N-Channel Power MOSFETs, 3.0 A, 350-400 V N沟道功率MOSFET.0甲，350-400 V
TRI N PLUG M 0-48
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STB46NF30 STP46NF30 STW46NF30 |
N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II Power MOSFET in a D2PAK package
N-channel 300 V, 0.063 Ω typ, 42 A, STripFET II Power MOSFET in D2PAK, TO-220 and TO-247 packages
N-channel 300 V, 0.063 Ω typ, 42 A, STripFET?II Power MOSFET in D2PAK, TO-220 and TO-247 packages
|
ST Microelectronics
STMicroelectronics
|
